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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：310µJ (on), 3.28mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：76ns/815ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC10SD is a discontinued single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C. The device utilizes a standard input type and is housed in a TO-220AB through-hole package. Key electrical parameters include a maximum on-state collector-emitter voltage of 1.8 V at 15 V gate drive and 8 A collector current, with a maximum power dissipation of 38 W. Switching characteristics are defined by turn-on energy of 140 µJ and turn-off energy of 2.58 mJ under specified test conditions.
Feature Summary
- Utilizes Generation 4 IGBT design for optimized high-frequency operation in hard switching applications
- Features ultra-fast switching capabilities suitable for resonant mode frequencies exceeding 200 kHz
- Provides tighter parameter distribution compared to previous generations for improved efficiency
Applications
- High-frequency power conversion circuits
- Resonant mode switching applications
- Industrial motor drives requiring fast switching speeds
Procurement Notes
This component is officially marked as obsolete and no longer manufactured by Infineon Technologies. Procurement must rely on secondary market distributors or surplus inventory sources. Verify the authenticity and physical condition of available units, as original packaging may be compromised. Confirm that the specific suffix 'SD' corresponds to the documented TO-220AB variant before integration into designs.
Selection Notes
Designers should evaluate the trade-off between the low on-state voltage and switching losses when selecting this device for high-frequency applications. Consider the thermal management requirements associated with the TO-220AB package and 38 W power dissipation limit. Ensure gate drive circuits can support the required 15 V level to achieve the specified 1.8 V saturation voltage. Review the complete datasheet for derating curves applicable to elevated junction temperatures.
Part Context
The IRG4BC10SD belongs to Infineon's UltraFast Speed IGBT family, characterized by Generation 4 technology. This series targets applications demanding high efficiency and fast switching speeds up to 40 kHz in hard switching or higher in resonant modes. The component shares architectural similarities with other models in the BC series but is distinguished by its specific current and voltage ratings within the 600 V class.
Replacement Considerations
Infineon lists IKA15N60TXKSA1 as a similar replacement part. Verify pin compatibility and electrical specifications against the original requirements. Evaluate thermal performance differences between the TO-220AB package of the IRG4BC10SD and the package used by the suggested substitute.
