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The IRG4BC15UD-S is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a DPAK-3 (TO-252-3) surface-mount package designed for high-frequency switching applications. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A, with a specific continuous current rating of 11 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 49 W. It operates within a temperature range of -55°C to +150°C.
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability should focus on distributor stock or secondary market sources rather than direct manufacturing orders. Confirm RoHS compliance status through official documentation before integration into new designs.
Select this part for applications requiring a 600V rated IGBT in a TO-252-3 package. Ensure the design accommodates the 1.95 V saturation voltage and 49 W power dissipation limits. Verify that the switching frequency requirements align with the device's ultrafast characteristics for optimal efficiency.
The IRG4BC15UD-S belongs to Infineon's BC series of IGBTs, which are engineered for general-purpose power switching. This specific model utilizes silicon technology and is distinct from higher-power modules or lower-voltage variants within the broader product portfolio.
Due to the EOL status, verify equivalent parts such as the IRG4BC15UD or other 600V TO-252-3 IGBTs from Infineon or other manufacturers. Cross-reference pinouts and thermal resistance values to ensure compatibility.