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The IRG4BC20F is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a TO-220AB package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C. The device has a typical saturation voltage of 1.98 V at 9 A and 150°C. Switching characteristics include a turn-on delay time of 52 ns and a fall time of 37 ns. Total gate charge is typically 27 nC. Maximum power dissipation is 60 W at 25°C case temperature.
Verify the exact suffix against official documentation, as ordering suffixes may indicate specific lead-free or packaging variations that do not alter electrical function. Confirm RoHS compliance status directly with the manufacturer's latest datasheet, as environmental declarations can change over time. Ensure the component matches the required TO-220AB footprint and pinout configuration for your design.
Select this component for designs requiring robust performance in medium-frequency switching environments. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within safe operating limits. Evaluate the short-circuit withstand time if your application demands high fault tolerance without immediate shutdown.
This IGBT belongs to the IRG4BC series, designed for general-purpose power switching. It utilizes Infineon's Fast IGBT technology to balance conduction and switching losses. The component is suitable for replacing older generation IGBTs in existing designs where improved efficiency and switching speed are required.
Public confirmed substitute part numbers: None identified in verified sources.