IRG4BC20KD

$1.53

Description：IGBT 600V 16A TO-220AB
Series：-

SKU:f7a861770fda Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 16A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：16 A
Current - Collector Pulsed (Icm)：32 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
Power - Max：60 W
Switching Energy：340µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：34 nC
Td (on/off) @ 25°C：54ns/180ns
Test Condition：480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr)：37 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC20KD

Overview

The IRG4BC20KD is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast soft-recovery anti-parallel diode. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 9A at 25°C. The device utilizes industry-standard D2Pak packaging for surface-mount applications. Key electrical parameters include a maximum power dissipation of 135W, a short-circuit rating of 10µs at 125°C, and a typical saturation voltage of 2.27V at VGE=15V and Ic=9A.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations.
Short-circuit rated capability up to 10µs at 125°C with VGE = 15V.
Optimized for high operating frequencies exceeding 5.0 kHz in hard switching applications.

Applications

High-frequency motor control systems
Bridge configurations requiring integrated freewheeling diodes
Power supplies operating above 5.0 kHz

Procurement Notes

Verify the specific suffix designation against the manufacturer's official documentation to confirm package type and lead-free status. Confirm RoHS compliance and end-of-life status prior to procurement, as component availability and regulatory classifications may change over time.

Selection Notes

Select this component for designs requiring high switching frequencies and integrated fast recovery diodes in a compact surface-mount footprint. Ensure thermal management supports the specified power dissipation and that gate drive voltages align with the 15V standard for optimal performance.

Part Context

This part belongs to Infineon's Generation 4 IGBT family, which succeeded earlier models like the IRGBC20KD2-S and IRGBC20MD2-S. The series focuses on maximizing power density and efficiency in motor control and power conversion applications through advanced silicon technology.