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Product Detailed Parameters
- Description：IGBT 600V 16A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：32 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
- Power - Max：60 W
- Switching Energy：150µJ (on), 250µJ (off)
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：28ns/150ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC20KPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Ultrafast Soft Recovery Diode technology and features a TO-220AB package with through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 600 V, a continuous collector current of 20 A at 25°C case temperature, and a typical saturated collector-emitter voltage of 1.8 V at 9 A. The device supports junction temperatures from -55°C to +175°C.
Feature Summary
- Integrates an ultrafast soft recovery diode for minimized electromagnetic interference and switching losses
- Provides high short-circuit capability with a rated withstand time of 10 microseconds
- Features low conduction losses combined with high switching speed for efficient power control
- Includes lead-free frame construction compliant with JEDEC standards
Applications
- Motor control applications requiring fast switching and robust fault tolerance
- High-frequency power conversion circuits
- Industrial power supplies and inverters
Procurement Notes
Verify the component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required lead-free specifications and package outline. Ensure compatibility with existing thermal management designs given the specified power dissipation limits.
Selection Notes
Select this component for designs prioritizing high-speed switching and short-circuit ruggedness. Evaluate the thermal impedance characteristics against the expected operating duty cycle. Consider the gate charge requirements when designing the drive circuitry to ensure optimal switching performance within the safe operating area.
Part Context
This IGBT belongs to the BC series, which combines high-voltage blocking capabilities with integrated anti-parallel diodes. The product line targets industrial applications demanding reliability under harsh electrical conditions. It represents a transition toward lead-free manufacturing processes while maintaining established performance benchmarks for power switching.
Replacement Considerations
Public confirmed substitute part numbers: IRG4BC20M
FAQ
What is the maximum short-circuit withstand time for the IRG4BC20KPbF?
The device is rated for a short-circuit withstand time of 10 microseconds.
Does the IRG4BC20KPbF include an integrated diode?
Yes, it integrates an ultrafast soft recovery diode to minimize switching losses and electromagnetic interference.
What is the maximum junction temperature rating?
The maximum junction temperature is rated at +175°C.
