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Product Detailed Parameters
- Description：IGBT 600V 19A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：19 A
- Current - Collector Pulsed (Icm)：38 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 10A
- Power - Max：60 W
- Switching Energy：320µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：62ns/690ns
- Test Condition：480V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC20SD is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 19 A. The device operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2 V at 15 V gate drive and 9 A collector current, with a typical low voltage drop of 1.4 V at 10 A. Switching characteristics specify a turn-on delay of 43 ns, turn-off delay of 240 ns, and reverse recovery time of 37 ns under test conditions of 480 V, 9 A, and 50 Ω. The component is housed in a TO-220AB package.
Feature Summary
- S-Series design minimizes power dissipation for inverter drives operating up to 3 kHz PWM frequency
- Extremely low voltage drop characteristic reduces conduction losses
- Standard input type suitable for general-purpose switching applications
Applications
- Inverter drives
- Switch-mode power supplies
- Motor control systems
Procurement Notes
Verify the specific suffix designation on the component marking against official Infineon documentation to confirm exact electrical specifications and packaging configuration. Confirm RoHS compliance status as historical data indicates potential non-compliance for older manufacturing batches. Ensure the procurement channel provides valid traceability records for this discontinued or legacy part number.
Selection Notes
Select this IGBT for applications requiring 600 V blocking capability and moderate current handling up to 19 A. The S-Series architecture is optimized for efficiency in inverter drives operating at frequencies up to 3 kHz. Consider the thermal management requirements associated with the TO-220AB package and the specified switching times when designing the gate drive circuitry.
Part Context
The IRG4BC20SD belongs to Infineon's S-Series of IGBTs, which are engineered to minimize power dissipation in inverter drive applications. This component represents a standard discrete power semiconductor solution designed for robust performance in industrial and consumer electronics power conversion circuits.
Replacement Considerations
Publicly confirmed substitute part numbers include IKP10N60TXKSA1 and IKP10N60T. These alternatives are identified as similar devices from Infineon Technologies. Verify pinout compatibility and electrical parameter alignment before substitution.
