ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 31A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：630µJ (on), 1.39mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：42ns/230ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4BC30FD-STRR is a Fast CoPack IGBT with an integrated hyperfast diode, designed for medium frequency applications. It features a D2PAK surface-mount package. Key electrical parameters include a collector-to-emitter voltage of 600 V and a continuous collector current of 31 A at 25°C. The device exhibits a maximum power dissipation of 100 W at 25°C. Switching characteristics include a turn-on delay time of 42 ns and a fall time of 160 ns under standard test conditions.
Feature Summary
- Integrates a fast IGBT with a hyperfast recovery diode in a single component.
- Utilizes CoPack technology to minimize internal emitter inductance.
- Designed for high efficiency in medium frequency switching applications.
Applications
- Medium frequency motor drives
- High-efficiency power supplies
- Industrial inverters
Procurement Notes
Verify the specific ordering suffix STRR against official Infineon documentation to confirm tape-and-reel packaging requirements. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest datasheet revision to confirm compliance with current specifications before finalizing orders.
Selection Notes
Select this component for designs requiring low internal inductance and fast switching speeds within a surface-mount form factor. Evaluate thermal management capabilities based on the junction-to-case thermal resistance. Consider the integrated diode's reverse recovery characteristics when designing snubber circuits or freewheeling paths for inductive loads.
Part Context
This device belongs to the IRG4BC series of insulated gate bipolar transistors manufactured by Infineon Technologies. The series is engineered for robust performance in power conversion systems. The specific model integrates advanced semiconductor technologies to optimize switching losses and conduction characteristics for modern electronic equipment.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Verify pinout compatibility and thermal characteristics when considering cross-brand replacements. Ensure any substitute meets the original voltage and current ratings.
