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Product Detailed Parameters
- Description：IGBT 600V 28A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：58 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
- Power - Max：100 W
- Switching Energy：360µJ (on), 510µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：26ns/130ns
- Test Condition：480V, 16A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30K-S is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter voltage rating of 600 V and a continuous collector current of 28 A at 25°C case temperature, reducing to 16 A at 100°C. The device utilizes a D2PAK surface-mount package with an isolated flange for thermal management. Key electrical characteristics include a typical saturation voltage of 2.21 V at 16 A and a short-circuit withstand time of 10 µs.
Feature Summary
- Optimized for high power density motor control applications
- Combines low conduction losses with high switching speed
- Features a 10 µs short circuit rating for robust operation
- Provides tighter parameter distribution compared to previous generations
Applications
- Motor control systems
- High-frequency hard switching circuits
- Resonant mode power supplies
Procurement Notes
Verify the manufacturer source carefully as this component was originally produced by International Rectifier before its acquisition by Infineon Technologies. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure compatibility with existing PCB footprints designed for the D2PAK-3 package.
Selection Notes
Select this IGBT when designing circuits requiring high efficiency and fast switching capabilities in the 8 kHz to 40 kHz range. Consider the thermal resistance values for heatsink design, specifically the junction-to-case rating. Evaluate the internal emitter inductance impact on switching performance during gate drive circuit design.
Part Context
This component belongs to the Generation 4 IGBT family, which offers improved efficiency over earlier designs. It serves as a direct replacement for the IRGBC30K-S and IRGBC30M-S devices. The part is characterized by its ultrafast soft recovery behavior and suitability for demanding industrial power electronics environments.
Replacement Considerations
- IRGBC30K-S
- IRGBC30M-S
FAQ
What is the maximum short-circuit withstand time for this device?
The IRG4BC30K-S supports a short-circuit withstand time of 10 µs under specified conditions.
Does this IGBT have an integrated freewheeling diode?
No, the IRG4BC30K-S is a discrete IGBT. Manufacturers recommend using HEXFRED ultrafast diodes for freewheeling applications.
How does the continuous collector current change with temperature?
The continuous collector current is rated at 28 A at a case temperature of 25°C and decreases to 16 A at a case temperature of 100°C.
