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The IRG4BC30K-STRLP is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) in a D2PAK surface-mount package. It features a collector-to-emitter voltage of 600 V and a continuous collector current of 28 A at 25°C case temperature. The device exhibits a typical saturation voltage of 2.21 V at 15 V gate drive and 16 A collector current. It supports a short-circuit withstand time of 10 µs and has a maximum power dissipation of 100 W.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging type, as variations exist between tape-and-reel and tube formats. Ensure the component matches the required thermal resistance specifications for your heat sink interface. Cross-reference the exact part number with official datasheets to confirm compliance with RoHS directives and lead-free status before finalizing procurement orders.
Select this IGBT when designing circuits requiring robust short-circuit tolerance up to 10 microseconds. Consider its 600 V rating and 28 A continuous current capability for medium-power inverter stages. Evaluate the thermal impedance characteristics to ensure adequate heatsinking for the intended duty cycle and ambient operating conditions.
This component belongs to the Generation 4 IGBT family from Infineon Technologies, formerly International Rectifier. It serves as a direct replacement for older IRGBC30K-S and IRGBC30M-S devices. The technology focuses on improving power density and efficiency compared to previous generations while maintaining reliable performance in demanding power electronics environments.
Officially documented replacements include the IRGBC30K-S and IRGBC30M-S devices.
The device supports a short-circuit withstand time of 10 µs under specified test conditions.
Yes, it replaces the IRGBC30K-S and IRGBC30M-S devices.
The typical collector-to-emitter saturation voltage is 2.21 V at 15 V gate drive and 16 A collector current.