IRG4BC30K

$2.54

Description：IGBT 600V 28A TO-220AB
Series：-

SKU:da304bdbe63e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 28A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：28 A
Current - Collector Pulsed (Icm)：58 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
Power - Max：100 W
Switching Energy：360µJ (on), 510µJ (off)
Input Type：Standard
Gate Charge：67 nC
Td (on/off) @ 25°C：26ns/130ns
Test Condition：480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC30K

Overview

The IRG4BC30K is a 600 V N-channel IGBT with an integrated ultrafast soft recovery diode, housed in a TO-220AB package. It features a maximum collector current of 32 A and a typical saturation voltage of 1.85 V at 16 A. The device supports short-circuit withstand times up to 10 µs at 360 V and 125 °C. Thermal resistance from junction to case is 1.0 K/W, while case-to-sink resistance is 0.5 K/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

High short-circuit rating optimized for motor control applications
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes

Applications

Motor control systems
Power conversion circuits
Induction heating

Procurement Notes

Verify the exact suffix against official Infineon documentation to confirm lead-free status and specific packaging variations. Ensure the component matches the required thermal and electrical specifications for your design. Cross-reference the datasheet revision date to confirm the validity of all listed parameters before finalizing procurement.

Selection Notes

Select this component when high power density and robust short-circuit capability are required. The integrated HEXFRED diode minimizes EMI and switching losses compared to discrete solutions. Evaluate the thermal management requirements based on the specified junction-to-case resistance values for your specific operating conditions.

Part Context

This part belongs to the latest generation of 4th generation IGBTs designed for high-efficiency motor controls. It replaces older models like the IRGBC30KD2 and IRGBC30MD2. The technology focuses on minimizing power dissipation while maintaining reliable operation under harsh electrical stress conditions common in industrial drives.