IRG4BC30KDPBF

Description：IGBT 600V 28A TO-220AB
Series：-

SKU:07d42005b026 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 28A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：28 A
Current - Collector Pulsed (Icm)：56 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
Power - Max：100 W
Switching Energy：600µJ (on), 580µJ (off)
Input Type：Standard
Gate Charge：67 nC
Td (on/off) @ 25°C：60ns/160ns
Test Condition：480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC30KDPBF

Overview

The IRG4BC30KDPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a single configuration in a TO-220-3 package with through-hole mounting. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 30 A at 25°C, and a collector-emitter saturation voltage of 1.95 V. The device supports ultrafast operation for frequencies between 8 kHz and 40 kHz in hard switching applications. It has a maximum power dissipation of 100 W and operates within a temperature range of -55°C to +150°C.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
UltraFast technology optimized for high operating frequencies in hard switching applications up to 40 kHz.
Integrated ultrafast soft recovery diode for improved performance in bridge configurations.

Applications

High-frequency motor drives
Switched-mode power supplies
DC-AC inverters

Procurement Notes

Verify the specific suffix KDPBF against official datasheets to confirm the inclusion of the integrated ultrafast soft recovery diode and the exact thermal characteristics. Confirm RoHS compliance status as manufacturing processes may evolve. Ensure the procurement channel provides genuine Infineon products to avoid counterfeit components that may lack specified switching speeds or thermal ratings.

Selection Notes

Select this component when designing circuits requiring a balance of low conduction losses and fast switching speeds in the 600V class. The integrated diode simplifies half-bridge designs by eliminating the need for external anti-parallel diodes. Consider the TO-220-3 package constraints for thermal management solutions suitable for 100W dissipation. Evaluate gate drive requirements to ensure compatibility with the standard input type specifications.

Part Context

This discrete IGBT belongs to Infineon's BC series, which focuses on cost-effective solutions for medium-power applications. The Generation 4 architecture represents an evolution in silicon technology aimed at reducing switching energy losses while maintaining robust avalanche capabilities. It serves as a core switching element in power electronics where reliability and efficiency are critical.

Replacement Considerations

Cross-reference with other Generation 4 IGBTs from the same family such as the IRG4BC30SPBF for standard speed variants or IRG4BC30U-SPBF for different packaging options. Verify pinout compatibility and thermal resistance values before substituting to ensure circuit integrity.