IRG4BC30S-SPBF

Description：IGBT 600V 34A 100W D2PAK
Series：-

SKU:314c3b09707c Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 34A 100W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：34 A
Current - Collector Pulsed (Icm)：68 A
Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 18A
Power - Max：100 W
Switching Energy：260µJ (on), 3.45mJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：22ns/540ns
Test Condition：480V, 18A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC30S-SPBF

Overview

The IRG4BC30S-SPBF is a Generation 4 standard speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an n-channel configuration in a D2PAK surface-mount package. Key electrical parameters include a collector-to-emitter breakdown voltage of 600 V and a continuous collector current of 34 A at 25°C case temperature. The typical collector-to-emitter saturation voltage is 1.4 V at 18 A with a gate drive of 15 V. Maximum power dissipation is rated at 100 W at 25°C, reducing to 42 W at 100°C. The device supports a junction temperature range from -55°C to +150°C.

Feature Summary

Generation 4 IGBT design providing tight parameter distribution and high efficiency
Optimized for minimum saturation voltage and low operating frequencies below 1 kHz
Lead-free construction compliant with industrial market qualification standards

Applications

Motor control systems requiring short circuit ratings
Power conversion circuits optimized for low switching frequencies
Industrial applications utilizing standard speed switching requirements

Procurement Notes

Verify the specific suffix 'SPBF' against official Infineon documentation to confirm lead-free status and tape-and-reel packaging details. Confirm that the component matches the D2PAK footprint dimensions provided in the datasheet before finalizing procurement orders.

Selection Notes

Select this component for designs prioritizing low conduction losses over high-speed switching capabilities. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Verify that the application frequency remains within the standard speed optimization limits defined in the technical specifications.

Part Context

This discrete IGBT belongs to the Generation 4 family designed for improved efficiency compared to previous iterations. It serves as a replacement for older models like the IRGBC30K and IRGBC30M in existing motor control and power supply architectures requiring robust performance at moderate switching speeds.