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The IRG4BC30S-STRLP is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 34 A. The device supports a maximum pulsed collector current of 50 A and dissipates up to 100 W of power. It utilizes a D2PAK-3 surface-mount package with an operating junction temperature range from -55°C to +175°C. The saturation voltage is specified at 1.8 V under standard test conditions.
This component is marked as obsolete and no longer manufactured by the original equipment manufacturer. Sourcing should focus on verified distributors holding remaining stock or approved equivalent replacements. Verify lot dates and authenticity carefully due to end-of-life status. Ensure replacement parts meet identical electrical specifications and pinout compatibility before integration into existing designs.
Select this IGBT for applications requiring 600V blocking capability and moderate current handling in compact surface-mount layouts. The D2PAK-3 form factor suits high-volume manufacturing processes. Consider thermal management requirements given the 100W dissipation limit. Evaluate switching speed trade-offs against conduction losses for specific frequency operations.
Part of Infineon’s BC series IGBT portfolio, designed for general-purpose power switching. The STRLP suffix indicates tape-and-reel packaging suitable for automated pick-and-place assembly. This discrete component serves as a fundamental building block in medium-power electronic conversion systems.
Available substitutes include similar IGBTs from Infineon such as the IGP15N60TXKSA1. Verify that alternative components match the 600V rating, current capacity, and D2PAK-3 footprint to ensure mechanical and electrical compatibility without redesigning the PCB layout.