IRG4BC30U-S

$1.46

Description：IGBT 600V 23A 100W D2PAK
Series：-

SKU:ee14612fad31 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 23A 100W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
Power - Max：100 W
Switching Energy：160µJ (on), 200µJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：17ns/78ns
Test Condition：480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC30U-S

Overview

The IRG4BC30U-S is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Silicon technology and is housed in a D-PAK-3 surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 23 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V, a gate-emitter voltage range of +/- 20 V, and a power dissipation rating of 100 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

UltraFast design optimized for high operating frequencies up to 40 kHz in hard switching applications
Generation 4 IGBT architecture providing tighter parameter distribution and higher efficiency compared to previous generations

Applications

High-frequency motor drives
Switch-mode power supplies
Resonant mode circuits

Procurement Notes

Verify the specific suffix against official documentation to confirm exact performance characteristics, as variations may exist. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Ensure the component meets all environmental operating limits specified in the technical data sheet for your application.

Selection Notes

Select this component for designs requiring surface-mount mounting with high-speed switching capabilities. The Generation 4 technology offers improved efficiency over older iterations. Verify that the thermal management solution supports the 100 W power dissipation rating under expected load conditions.

Part Context

This discrete IGBT belongs to Infineon's ultrafast product line, designed specifically for applications demanding fast switching speeds. It serves as a standalone power switch suitable for various industrial and consumer electronics power conversion systems where compact surface-mount packaging is required.