IRG4BC30U-STRRP

Description：IGBT 600V 23A 100W D2PAK
Series：-

SKU:a03f7c060e45 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 23A 100W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
Power - Max：100 W
Switching Energy：160µJ (on), 200µJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：17ns/78ns
Test Condition：480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC30U-STRRP

Overview

The IRG4BC30U-STRRP is a Generation 4 n-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a D2Pak surface-mount package. It features a collector-to-emitter breakdown voltage of 600 V and a continuous collector current rating of 23 A at 25°C case temperature. The device exhibits a typical saturation voltage of 1.95 V at 12 A and 15 V gate drive. Designed for high-frequency operation, it supports hard switching frequencies between 8 kHz and 40 kHz, with resonant mode capabilities exceeding 200 kHz.

Feature Summary

UltraFast switching characteristics optimized for high operating frequencies in both hard switching and resonant applications.
Generation 4 IGBT design architecture providing tighter parameter distribution and higher efficiency compared to previous generations.
Industry-standard D2Pak surface-mount package configuration designed as a drop-in replacement for equivalent industry-standard Generation 3 IGBTs.

Applications

High-frequency power conversion circuits
Resonant mode power supplies
Industrial motor drives

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm tape-and-reel packaging specifications. Confirm that the component meets all required RoHS compliance standards for the intended market. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under steady-state conditions.

Selection Notes

Select this component for applications requiring high efficiency and tight parameter distribution in surface-mount designs. Evaluate thermal performance based on the specified junction-to-ambient resistance when mounted on standard PCB materials. Consider the ultrafast switching speed for minimizing losses in high-frequency topologies.

Part Context

This discrete IGBT belongs to Infineon's Generation 4 UltraFast family, engineered to replace older Generation 3 devices. It utilizes silicon technology within a lead-free D2Pak housing. The series emphasizes improved efficiency and reliability for modern power electronics demanding compact form factors.