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Product Detailed Parameters
- Description：IGBT 600V 23A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：23 A
- Current - Collector Pulsed (Icm)：92 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：160µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：17ns/78ns
- Test Condition：480V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC30U is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-emitter voltage rating and an ultrafast switching profile optimized for high-frequency operation, specifically designed for hard switching applications between 8 kHz and 40 kHz, with resonant mode capabilities exceeding 200 kHz. The device utilizes a standard TO-220AB flange-mount package to facilitate efficient thermal management. Key electrical characteristics include a maximum continuous collector current of 40A and a typical collector-emitter saturation voltage of 1.72V at a gate-emitter voltage of 15V and collector current of 20A.
Feature Summary
- UltraFast switching technology optimized for high operating frequencies in hard switching and resonant modes
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations
- Industry-standard TO-220AB package configuration for reliable mounting and thermal dissipation
Applications
- High-frequency power conversion systems requiring hard switching up to 40 kHz
- Resonant mode power supplies operating above 200 kHz
- Industrial motor drives and inverters utilizing Generation 4 IGBT topology
Procurement Notes
Verify the specific suffix and revision level when ordering, as manufacturing updates may affect mechanical dimensions or minor electrical tolerances. Confirm RoHS compliance status through official datasheets prior to integration. Ensure that the procurement channel provides authentic Infineon components to guarantee performance reliability and adherence to specified Generation 4 parameters.
Selection Notes
Select this component for designs prioritizing high efficiency and tight parameter consistency in medium-power applications. The Generation 4 architecture offers superior performance over Generation 3 devices. Evaluate thermal requirements based on the TO-220AB package limitations and ensure the driving circuit supports the required gate-emitter voltage levels for optimal saturation voltage performance.
Part Context
This discrete IGBT belongs to Infineon's BC series, which focuses on robust performance in standard packages. It complements other ultrafast variants like the IRG4BC30F and IRG4BC40U within the same voltage class. The product line emphasizes improved efficiency and parameter control for industrial and consumer power electronics markets.
Replacement Considerations
Direct replacements include the IRG4BC30SPBF for standard switching applications and the IRG4BC30F-STRR for surface-mount implementations. Verify pin compatibility and thermal resistance differences when substituting with the IRG4BC40U due to its higher current rating.
