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The IRG4BC30UPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features a 600V collector-emitter voltage rating and a continuous collector current of 23A at 25°C. The device utilizes UltraFast technology, optimized for hard switching frequencies between 8kHz and 40kHz, and resonant modes exceeding 200kHz. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.95V and a power dissipation capacity of 100W. It is housed in a D-PAK-3 surface-mount package with an operating temperature range from -55°C to +150°C.
Verify the manufacturer designation as International Rectifier or Infineon Technologies, noting that Infineon acquired International Rectifier's power management portfolio. Confirm the RoHS compliance status and ensure the specific suffix 'PBF' indicates lead-free packaging consistent with the datasheet specifications. Validate the package type matches the D-PAK-3 form factor before integration.
Select this component when designing circuits requiring 600V blocking voltage with moderate current handling up to 23A. The UltraFast switching speed makes it appropriate for applications where minimizing switching losses is critical. Ensure thermal management solutions support the 100W power dissipation rating within the specified junction temperature limits.
This part belongs to the IRG4BC series of Generation 4 IGBTs from International Rectifier. It serves as a successor to earlier models like the IRGBC30K and IRGBC30M, offering improved efficiency and parameter consistency. The series is designed to meet the demands of modern high-density power electronics.
The IRG4BC30UPBF officially replaces the IRGBC30K and IRGBC30M devices. When substituting, verify that the replacement maintains the same 600V rating and compatible gate drive requirements. Consider thermal resistance differences if moving between different package variants within the same family.