SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG4BC30W-STRL is a surface-mount Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 31 A at 25°C. The device supports a pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Key electrical parameters include a typical on-state collector-emitter voltage of 1.8 V at 17 A with a 15 V gate drive, a gate charge of 51 nC, and turn-on/turn-off delay times of 21 ns and 200 ns respectively under specified test conditions.
Verify the specific suffix 'STRL' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required RoHS compliance status and automotive qualification if applicable. Cross-reference the datasheet revision date to validate the accuracy of the provided electrical parameters before finalizing procurement orders.
Select this IGBT for designs requiring robust short-circuit capability and efficient thermal management in compact surface-mount layouts. Consider the 600 V rating and 31 A current capacity when sizing heat sinks and selecting complementary freewheeling diodes. Evaluate the switching energy values against system frequency requirements to ensure acceptable total power loss and junction temperature limits.
This component belongs to the TRENCHSTOP™ IGBT family from Infineon, designed for high-efficiency power switching. It serves as an upgrade to previous generations like the IRGBC30K and IRGBC30M, offering improved performance metrics. The D²PAK package facilitates automated assembly while maintaining adequate thermal conductivity for moderate power densities.
Public confirmed substitute part numbers are not available in the provided source material.