IRG4BC40W-SPBF

Description：IGBT 600V 40A 160W D2PAK
Series：-

SKU:45a131ea70b8 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A 160W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：160 W
Switching Energy：110µJ (on), 230µJ (off)
Input Type：Standard
Gate Charge：98 nC
Td (on/off) @ 25°C：27ns/100ns
Test Condition：480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC40W-SPBF

Overview

The IRG4BC40W-SPBF is a single n-channel IGBT in a TO-262 (D2PAK) package. It features a collector-emitter breakdown voltage of 600V and a continuous collector current of 50A at 25°C. The typical saturation voltage is 2.03V at 15V gate drive and 20A. Maximum power dissipation is 160W, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed for switch-mode power supply and PFC applications
Industry-benchmark switching losses improve efficiency
Low conduction losses and minimal minority-carrier recombination
Lead-free construction

Applications

Switch-Mode Power Supply topologies
Power Factor Correction (PFC)
Single-ended converters
Boost PFC topologies

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to confirm lead-free status and specific packaging variations. Confirm RoHS compliance requirements match your manufacturing standards. Check for any recent product discontinuation notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high efficiency in hard-switched modes up to 150 kHz. Consider its low Eoff parameter for cost-effective operation compared to power MOSFETs. Evaluate thermal management needs based on the specified maximum power dissipation and thermal resistance values for your specific enclosure constraints.

Part Context

This device belongs to the industry-standard IGBT family optimized for high-frequency switching. It utilizes Generation 4 IGBT design technology to provide tighter parameter distribution and higher efficiency than previous generations. The component is housed in a robust D2PAK package suitable for surface-mount assembly.