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The IRG4BH20K-L is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter saturation voltage of 3.17 V and supports a continuous collector current of 11 A at 25 °C. The device is rated for a maximum collector-emitter voltage of 1200 V and a gate-emitter voltage range of -20 V to +20 V. Power dissipation is specified at 60 W, with operation supported within a temperature range from -40 °C to +175 °C. The component utilizes a TO-262 through-hole package.
Verify the specific ordering suffix to ensure correct package type and lead-free compliance. Confirm that the requested variant matches the required thermal characteristics and pin configuration for your PCB layout. Cross-reference the datasheet revision to ensure compatibility with your system's electrical requirements.
Select this component when a 1200 V rating and 11 A continuous current capacity are required in a through-hole format. Consider the 3.17 V saturation voltage for conduction loss calculations. Ensure the thermal management solution supports the 60 W power dissipation limit under your specific operating conditions.
This part belongs to Infineon's discrete IGBT portfolio, designed to balance performance and cost. It represents a specific configuration within the broader family of power semiconductors intended for industrial and consumer electronics power stages.
Check for direct substitutes such as the IRG4BH20K-SPBF or IRG4BH20K-STRLP if surface-mount or reel-packaged variants are preferred. Verify pinout compatibility before substituting.