IRG4BH20K-L

IRG4BH20K-L

$1.35
  • Description:IGBT 1200V 11A TO-262
  • Series:-

SKU:2fbda6841926 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 11A TO-262
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):11:00 AM
  • Current - Collector Pulsed (Icm):22 A
  • Vce(on) (Max) @ Vge, Ic:4.3V @ 15V, 5A
  • Power - Max:60 W
  • Switching Energy:450µJ (on), 440µJ (off)
  • Input Type:Standard
  • Gate Charge:28 nC
  • Td (on/off) @ 25°C:23ns/93ns
  • Test Condition:960V, 5A, 50Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262
  • Grade:-
  • Qualification:-

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IRG4BH20K-L

Overview

The IRG4BH20K-L is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter saturation voltage of 3.17 V and supports a continuous collector current of 11 A at 25 °C. The device is rated for a maximum collector-emitter voltage of 1200 V and a gate-emitter voltage range of -20 V to +20 V. Power dissipation is specified at 60 W, with operation supported within a temperature range from -40 °C to +175 °C. The component utilizes a TO-262 through-hole package.

Feature Summary

  • Combines low conduction losses with high switching speed capabilities
  • Utilizes latest generation design technology for superior energy efficiency
  • Provides exceptional reliability for diverse power management applications

Applications

  • High-frequency inverter circuits operating between 4-20 kHz
  • Discrete IGBT power switching modules
  • Ultrafast power conversion systems

Procurement Notes

Verify the specific ordering suffix to ensure correct package type and lead-free compliance. Confirm that the requested variant matches the required thermal characteristics and pin configuration for your PCB layout. Cross-reference the datasheet revision to ensure compatibility with your system's electrical requirements.

Selection Notes

Select this component when a 1200 V rating and 11 A continuous current capacity are required in a through-hole format. Consider the 3.17 V saturation voltage for conduction loss calculations. Ensure the thermal management solution supports the 60 W power dissipation limit under your specific operating conditions.

Part Context

This part belongs to Infineon's discrete IGBT portfolio, designed to balance performance and cost. It represents a specific configuration within the broader family of power semiconductors intended for industrial and consumer electronics power stages.

Replacement Considerations

Check for direct substitutes such as the IRG4BH20K-SPBF or IRG4BH20K-STRLP if surface-mount or reel-packaged variants are preferred. Verify pinout compatibility before substituting.

IRG4BH20K-LIRG4BH20K-L
$1.35
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