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The IRG4IBC10UDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220FP-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 6.8 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.61 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 25 W. It operates within a temperature range of -55°C to the maximum specified limit.
Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix matches required specifications. Note that availability may be restricted due to lifecycle status. Ensure compliance with RoHS directives and verify lead-free status for manufacturing processes. Cross-reference ordering numbers with official manufacturer documentation to prevent specification mismatches.
Select this component for designs requiring 600 V blocking capability with moderate current handling. The TO-220FP-3 package facilitates efficient heat dissipation for low-to-medium power applications. Evaluate thermal resistance requirements against the 25 W dissipation limit. Consider the ultrafast switching speed for minimizing losses in high-frequency topologies compared to standard IGBTs.
This part belongs to Infineon's IGBT transistor portfolio, specifically categorized under ultrafast devices. It is distinct from higher-current modules or lower-voltage variants. The product line targets applications demanding fast turn-off times and reduced switching losses in compact discrete packages.
Public confirmed substitute part numbers are not available in the provided data. Verify compatibility with existing circuit designs if sourcing alternatives. Check for equivalent voltage, current, and package specifications when evaluating potential replacements.