IRG4IBC10UD

IRG4IBC10UD

$3.26
  • Description:IGBT 600V 6.8A TO220-FP
  • Series:-

SKU:0f1540a8902e Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 6.8A TO220-FP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):6.8 A
  • Current - Collector Pulsed (Icm):27 A
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 5A
  • Power - Max:25 W
  • Switching Energy:140µJ (on), 120µJ (off)
  • Input Type:Standard
  • Gate Charge:15 nC
  • Td (on/off) @ 25°C:40ns/87ns
  • Test Condition:480V, 5A, 100Ohm, 15V
  • Reverse Recovery Time (trr):28 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:PG-TO220-FP
  • Grade:-
  • Qualification:-

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IRG4IBC10UD

Overview

The IRG4IBC10UDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220FP-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 6.8 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.61 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 25 W. It operates within a temperature range of -55°C to the maximum specified limit.

Feature Summary

  • Single IGBT configuration designed for high-speed switching applications
  • Ultrafast performance characteristics suitable for frequencies between 8 kHz and 60 kHz
  • Robust thermal management capabilities via standard through-hole mounting

Applications

  • High-frequency power conversion circuits
  • Switch-mode power supplies requiring ultrafast switching
  • Industrial motor drive inverters operating within specified frequency ranges

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix matches required specifications. Note that availability may be restricted due to lifecycle status. Ensure compliance with RoHS directives and verify lead-free status for manufacturing processes. Cross-reference ordering numbers with official manufacturer documentation to prevent specification mismatches.

Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current handling. The TO-220FP-3 package facilitates efficient heat dissipation for low-to-medium power applications. Evaluate thermal resistance requirements against the 25 W dissipation limit. Consider the ultrafast switching speed for minimizing losses in high-frequency topologies compared to standard IGBTs.

Part Context

This part belongs to Infineon's IGBT transistor portfolio, specifically categorized under ultrafast devices. It is distinct from higher-current modules or lower-voltage variants. The product line targets applications demanding fast turn-off times and reduced switching losses in compact discrete packages.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Verify compatibility with existing circuit designs if sourcing alternatives. Check for equivalent voltage, current, and package specifications when evaluating potential replacements.

IRG4IBC10UDIRG4IBC10UD
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