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The IRG4IBC20FD is an insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It integrates a single IGBT chip with an ultrafast soft recovery diode in a TO-220FP package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 14.3 A at 25°C. Maximum power dissipation is rated at 34 W. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix and RoHS compliance status, as historical data indicates variations between International Rectifier and Infineon branding. Confirm the exact thermal resistance values and pinout configuration against the latest official datasheet before integration into PCB designs.
Select this component for applications requiring integrated freewheeling diode functionality in a compact through-hole package. Ensure the design accommodates the 600V blocking capability and 14.3A current rating under expected thermal conditions.
This part belongs to the IRG4BC/IRG4RC family of IGBT modules from Infineon. It represents a legacy product line originally developed by International Rectifier, now maintained under the Infineon portfolio for standard industrial power conversion applications.
Consult official replacement guides for direct equivalents such as the IRG4BC20FD or IRG4RC20FTRPBF, ensuring pin compatibility and electrical parameter alignment.