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Product Detailed Parameters
- Description：IGBT 600V 11.5A TO220-FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：11.5 A
- Current - Collector Pulsed (Icm)：23 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
- Power - Max：34 W
- Switching Energy：340µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：54ns/180ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：PG-TO220-FP
- Grade：-
- Qualification：-
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Overview
The IRG4IBC20KD is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600V and a maximum continuous collector current of 11.5A, with a pulse current rating of 23A. The device is housed in a TO-220AB Full-Pak package and supports an operating junction temperature range from -55°C to +150°C. Key electrical parameters include a saturation voltage of 1.28V at 15A, turn-on energy of 340µJ, and turn-off energy of 300µJ at specified test conditions.
Feature Summary
- Robust through-hole TO-220AB Full-Pak packaging designed for harsh electrical environments
- Wide operating temperature range supporting applications from -55°C to +150°C
- High pulse current capability providing resilience against transient load conditions
Applications
- Motor drive inverters
- Switch-mode power supplies
- Industrial motor control systems
Procurement Notes
Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity and pin alignment upon receipt. Validate datasheet revisions against specific design requirements. Ensure storage conditions maintain moisture sensitivity levels. Cross-reference replacement options if supply chain continuity is critical for long-term production.
Selection Notes
Evaluate thermal management requirements based on 34W power dissipation limits. Compare switching speeds and energy losses against alternative IGBTs for efficiency optimization. Consider gate drive voltage compatibility with the 2.8V threshold specification. Assess mechanical mounting constraints associated with the TO-220AB footprint. Review derating curves for high-temperature operation above 150°C junction limits.
Part Context
This component belongs to Infineon's legacy IGBT portfolio, originally developed under International Rectifier before acquisition. It represents a standard discrete solution for medium-power switching applications. The part number indicates specific electrical characteristics and packaging configuration within the manufacturer's classification system.
Replacement Considerations
Public confirmed substitute part numbers are not available in verified documentation. Consult official Infineon cross-reference guides or authorized distributor databases for compatible alternatives. Verify pinout and electrical parameter equivalence before substitution.
