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Product Detailed Parameters
- Description：IGBT 600V 11.5A TO220AB FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：11.5 A
- Current - Collector Pulsed (Icm)：23 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
- Power - Max：34 W
- Switching Energy：340µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：54ns/180ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220AB Full-Pak
- Grade：-
- Qualification：-
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Overview
The IRG4IBC20KDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter maximum voltage of 1.2 kV and a continuous collector current of 20 A at 25°C. The device operates within a temperature range of -55°C to +150°C junction temperature. It utilizes a TO-247-3 package for through-hole mounting. Key electrical parameters include a saturation voltage of 3.5 V and a power dissipation rating of 100 W.
Feature Summary
- Single IGBT configuration designed for high-voltage switching applications
- Robust thermal performance with a wide operating temperature range up to 150°C
- High blocking voltage capability suitable for industrial power conversion
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'PBF' indicates lead-free compliance and RoHS adherence as per Infineon standards. Confirm the package type matches the required PCB footprint. Check current availability status as older generation IGBTs may have limited stock or end-of-life implications. Ensure gate drive requirements align with the specified voltage limits.
Selection Notes
Select this component when a 1.2 kV rated single IGBT is required for moderate current applications around 20 A. Consider the TO-247-3 package for ease of heatsinking in through-hole designs. Evaluate thermal resistance requirements against the 100 W dissipation limit. Compare switching speed characteristics if high-frequency operation is critical for the target application efficiency.
Part Context
This part belongs to Infineon's IRG4 series of IGBTs, which are silicon-based discrete power devices. The series is characterized by optimized trade-offs between conduction losses and switching times. The IRG4IBC20KDPBF specifically targets applications requiring reliable high-voltage switching with manageable thermal management solutions in standard through-hole packages.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source data. Cross-referencing with similar Infineon parts requires verifying exact electrical parameter matching.
