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The IRG4IBC20W is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 11.8A. The device is housed in a TO-220FP package with a maximum power dissipation of 34W. It operates within a junction temperature range of -55°C to 150°C.
This component is officially classified as obsolete or not for new designs. Sourcing is limited to existing stock from authorized distributors or third-party suppliers. Verify authenticity and condition carefully, as availability is restricted and lead times may vary significantly depending on supplier inventory levels.
Select this IGBT for applications requiring operation at frequencies up to 150kHz. Ensure the thermal management system can handle the 34W power dissipation limit. Consider the TO-220FP footprint constraints during PCB layout. Evaluate alternative components if long-term supply stability is required for production.
The IRG4IBC20W belongs to Infineon's IGBT portfolio, specifically utilizing Warp technology. It is designed as a single discrete device for medium-power applications. Related variants include the IRG4BC20FD and IRG4RC20FTRPBF, which offer different packaging or speed characteristics within the same voltage class.
The IRG4IBC20WPBF is a documented equivalent part number for this component. Other potential substitutes within the 600V/12A class include the IRG4BC20FD, though pinout and thermal resistance differences must be verified against the specific application requirements.