IRG4IBC20WPBF

$0.65

Description：IGBT 600V 12A TO220AB FP
Series：-

SKU:0751f2916bac Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 12A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube,Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：12:00 AM
Current - Collector Pulsed (Icm)：52 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 6.5A
Power - Max：34 W
Switching Energy：60µJ (on), 80µJ (off)
Input Type：Standard
Gate Charge：26 nC
Td (on/off) @ 25°C：22ns/110ns
Test Condition：480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRG4IBC20WPBF

Overview

The IRG4IBC20WPBF is a single Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for high-frequency switching applications. It features a 600V collector-emitter voltage rating and supports operating frequencies between 60kHz and 150kHz. The device utilizes Warp technology to optimize switching performance. It is housed in a TO-220AB Full-Pak through-hole package, providing robust thermal management. Key electrical parameters include a maximum continuous collector current of 12A, a saturation voltage of 2.16V, and a power dissipation capacity of 34W at 25°C. The gate-emitter voltage range is ±20V, with a typical gate charge of 26nC.

Feature Summary

Optimized for high-frequency operation up to 150kHz using Warp technology
Designed specifically for switch-mode power supplies and PFC circuits
Robust thermal performance via TO-220AB Full-Pak packaging

Applications

Switch-mode power supply (SMPS) designs
Power factor correction (PFC) circuits
High-frequency inverter applications

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm that the received part matches the full marking code IRG4IBC20WPBF. Check datasheet revisions for any updates to thermal characteristics or absolute maximum ratings before final integration into production systems.

Selection Notes

Select this IGBT for applications requiring high switching speeds above 60kHz. Ensure the design accommodates the 600V breakdown voltage and 12A current limits. Consider the TO-220AB package constraints for PCB layout and heatsinking requirements relative to the 34W power dissipation specification.

Part Context

This component belongs to Infineon's IGBT transistor family, specifically utilizing Warp technology for enhanced efficiency. It serves as a discrete switching element within power electronics modules, distinct from integrated driver solutions or multi-chip modules.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon cross-reference guides for potential alternatives.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.