IRG4IBC30FDPBF

Description：IGBT 600V 20.3A TO220AB FP
Series：-

SKU:dba1c312c750 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 20.3A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20.3 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
Power - Max：45 W
Switching Energy：630µJ (on), 1.39mJ (off)
Input Type：Standard
Gate Charge：51 nC
Td (on/off) @ 25°C：42ns/230ns
Test Condition：480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRG4IBC30FDPBF

Overview

The IRG4IBC30FDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an integrated ultrafast soft recovery diode and is housed in a TO-220AB flange mount package with three terminals. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 17 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a saturation voltage of 2.8 V, and a power dissipation rating of 150 W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Integrates an ultrafast soft recovery diode for efficient commutation.
Utilizes Generation 4 IGBT technology for optimized switching performance.
Designed for high operating frequencies up to 60 kHz in hard-switching applications.

Applications

Motor drives
Switched-mode power supplies
High-frequency inverters

Procurement Notes

Verify the specific suffix 'FDPBF' against official datasheets to confirm lead-free compliance and tape-and-reel packaging status. Confirm availability as this component may be subject to end-of-life status or supply constraints. Ensure thermal management solutions align with the specified 150 W power dissipation capability in the TO-220AB package.

Selection Notes

Select this component for designs requiring a single IGBT with a built-in fast recovery diode. The 600 V rating suits medium-voltage AC/DC conversion. Consider the 17 A current limit and 150 W thermal dissipation when designing heat sinks. Verify that the 60 kHz frequency capability meets the system's switching requirements.

Part Context

This part belongs to Infineon's discrete IGBT product line, specifically utilizing Generation 4 technology. It is designed to replace older generations with improved efficiency and tighter parameter distribution. The TO-220AB package provides a robust mechanical solution for through-hole mounting in industrial and consumer electronics.

Replacement Considerations

Check for direct replacements such as the IRG4BC30U-SPBF or other Generation 4 IGBTs with similar 600V/17A ratings. Ensure pinout compatibility and thermal characteristics match before substitution.