IRG4IBC30S

$2.23

Description：IGBT 600V 23.5A TO220AB FP
Series：-

SKU:452bb66a657f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 23.5A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：23.5 A
Current - Collector Pulsed (Icm)：68 A
Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 18A
Power - Max：45 W
Switching Energy：260µJ (on), 3.45mJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：22ns/540ns
Test Condition：480V, 18A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRG4IBC30S

Overview

The IRG4IBC30S is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, housed in a TO-220 Full-Pak package. It features a collector-to-emitter breakdown voltage of 600 V and a continuous collector current of 23.5 A at 25°C case temperature. The device exhibits a typical saturation voltage of 1.4 V at 18 A and 15 V gate drive. Maximum power dissipation is rated at 45 W at 25°C and 18 W at 100°C. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Optimized for minimum saturation voltage and low operating frequencies below 1 kHz.
Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs.

Applications

Industrial motor drives
Power supplies
Inverters

Procurement Notes

Verify the specific suffix against official documentation to confirm lead-free status and exact marking. Confirm that the component meets Industrial market qualification standards before integration into designs requiring high reliability under harsh conditions.

Selection Notes

Select this component for applications requiring robust performance at low switching frequencies. Ensure thermal management supports the specified junction-to-case thermal resistance. Verify gate drive requirements align with the 15 V standard operation for optimal saturation voltage characteristics.

Part Context

This part belongs to the IRG4IBC series of insulated gate bipolar transistors manufactured by Infineon Technologies, formerly International Rectifier. The series utilizes Generation 4 technology to enhance efficiency and parameter consistency for industrial power conversion applications.