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Product Detailed Parameters
- Description：IGBT 600V 17A TO220-FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：17 A
- Current - Collector Pulsed (Icm)：92 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：45 W
- Switching Energy：380µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：40ns/91ns
- Test Condition：480V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：PG-TO220-FP
- Grade：-
- Qualification：-
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Overview
The IRG4IBC30UDPbF is an Insulated Gate Bipolar Transistor with an UltraFast Soft Recovery Diode, housed in an isolated TO-220 Fullpak package. It features a collector-emitter voltage of 600V and a continuous collector current of 17A at 25°C case temperature. The device includes a co-packaged HEXFRED diode with a maximum forward current of 92A. Key electrical parameters include a typical VCE(sat) of 1.95V at 15V gate drive and 12A collector current. Thermal resistance from junction to case is 2.8°C/W for the IGBT and 4.1°C/W for the diode.
Feature Summary
- Co-packaged HEXFRED ultrafast, ultrasoft recovery antiparallel diode minimizes switching losses and EMI
- Optimized for high operating frequencies up to 40 kHz in hard switching and over 200 kHz in resonant mode
- Tighter parameter distribution compared to previous generations
- Industry standard isolated TO-220 Fullpak outline with lead-free construction
Applications
- High frequency power conversion circuits
- Resonant mode power supplies
- Hard switching applications requiring low EMI
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the component against the official Infineon datasheet PD-95598A to confirm specifications. Ensure the ordering suffix matches the required lead-free status. Check for availability as this specific part number may be subject to lifecycle changes or regional distribution restrictions. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values.
Selection Notes
Select this component for designs requiring high efficiency and reduced electromagnetic interference due to the soft recovery diode. Consider the 600V rating and 17A continuous current capability for medium-power applications. Evaluate the thermal performance based on the 2.8°C/W junction-to-case resistance. Ensure the gate drive circuitry supports the specified 15V turn-on voltage for optimal saturation characteristics.
Part Context
This device belongs to the UltraFast CoPack IGBT family, combining an IGBT with a fast recovery diode in a single isolated package. It represents Generation 3 technology designed for improved efficiency over earlier iterations. The TO-220 Fullpak provides a standardized footprint for easy integration into existing thermal management systems while maintaining electrical isolation between the terminal and heatsink.
Replacement Considerations
Check for updated generation devices within the Infineon portfolio that may offer tighter parameter distributions or enhanced thermal performance. Verify pinout compatibility if substituting with other TO-220 Fullpak variants. Ensure any replacement maintains the 600V blocking voltage and similar current handling capabilities.
