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Product Detailed Parameters
- Description：IGBT 600V 17A TO220AB FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：17 A
- Current - Collector Pulsed (Icm)：68 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：45 W
- Switching Energy：380µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：40ns/91ns
- Test Condition：480V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220AB Full-Pak
- Grade：-
- Qualification：-
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Overview
The IRG4IBC30UDPBF is an n-channel Insulated Gate Bipolar Transistor with an integrated UltraFast Soft Recovery Diode. It features a 600V collector-to-emitter voltage rating and a continuous collector current of 17A at 25°C case temperature. The device utilizes Generation 3 IGBT technology co-packaged with HEXFRED diodes, offering a typical saturation voltage of 1.95V at 15V gate drive and 12A collector current. It operates within a junction temperature range of -55°C to +150°C and provides 2.5kV RMS isolation voltage between terminals and the case.
Feature Summary
- Co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes to minimize switching losses and EMI
- Generation 3 IGBT design optimized for high operating frequencies in hard switching and resonant modes
- Industry standard isolated TO-220 Fullpak outline with lead-free construction
Applications
- High frequency power conversion circuits
- Resonant mode power supplies
- Hard switching applications requiring low EMI
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches the required lead-free specification. Check datasheet revisions for any updates to thermal resistance or electrical limits before finalizing integration into production designs.
Selection Notes
Select this component for designs requiring high efficiency and tight parameter distribution. Ensure the gate drive circuit supports the specified 15V turn-on voltage for optimal saturation performance. Verify that the thermal management system can handle the junction-to-case thermal resistance values under maximum load conditions.
Part Context
This part belongs to the IRG4IBC series of insulated gate bipolar transistors. It represents a discrete power semiconductor solution combining IGBT and diode technologies in a single package. The product line focuses on improving power density and reducing electromagnetic interference in medium-power electronic systems.
Replacement Considerations
Consult official replacement guides for direct substitutes. Verify pinout compatibility and thermal characteristics when considering alternative packages.
