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The IRG4PC30FDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ technology and is housed in a TO-247-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 200 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'PBF' confirms lead-free compliance and RoHS adherence. Confirm the manufacturer part number matches exactly, as suffixes may indicate tape-and-reel packaging or specific testing criteria. Check for obsolescence status, as older IGBT models may have limited availability or require approved alternates. Ensure the supplier provides valid traceability documentation for quality assurance.
Select this component when a 600 V IGBT with moderate current handling is required for medium-power applications. The TO-247-3 package facilitates easy integration into existing through-hole designs. Consider the trade-off between the 1.9 V saturation voltage and switching speed based on the specific frequency requirements of the target circuit. Verify that the thermal management solution can handle the 200 W dissipation rating under worst-case operating conditions.
This IGBT belongs to Infineon's TRENCHSTOP™ family, which combines trench gate and field-stop technologies. This architecture is designed to reduce switching losses while maintaining low conduction voltage. The TO-247-3 package is a standard industry form factor for discrete power devices, allowing for direct mounting onto heatsinks using a single screw.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon replacement guides for cross-reference information regarding newer generations or equivalent specifications.