ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 28A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：58 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
- Power - Max：100 W
- Switching Energy：600µJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：60ns/160ns
- Test Condition：480V, 16A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4PC30KD is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 28 A. The device is housed in a TO-247AC through-hole package, suitable for high-power applications. Key electrical parameters include a maximum power dissipation of 100 W, an on-state switching energy of 600 µJ, an off-state switching energy of 580 µJ, and a gate charge of 67 nC. These specifications define its operational limits and performance characteristics within power conversion circuits.
Feature Summary
- High-performance insulated gate bipolar transistor designed for efficient power switching
- Robust construction supporting high voltage and current handling capabilities
- Optimized switching characteristics for industrial power conversion efficiency
Applications
- Industrial motor drives
- Power supply units
- Inverter circuits
Procurement Notes
Verify the specific suffix requirements when sourcing replacements, as packaging or lead-free variants may differ. Confirm that the TO-247AC package matches the target PCB footprint. Ensure the component meets the required thermal management standards for the intended application environment. Cross-reference datasheet revisions to confirm parameter consistency with existing designs.
Selection Notes
Select this IGBT for applications requiring 600V blocking capability and up to 28A continuous current. Consider the 100W power dissipation limit and thermal resistance when designing heat sinks. Evaluate the switching energy values against the system's frequency requirements to manage losses. Ensure the gate drive circuitry can support the specified gate charge for optimal switching speed.
Part Context
This component belongs to Infineon's range of single IGBTs, which are widely used in medium-power electronic systems. The TO-247AC package provides a reliable mechanical connection and thermal path for through-hole mounting. It serves as a fundamental switching element in various power electronics architectures, bridging control signals with high-power loads.
Replacement Considerations
- IRG4PC30KDPBF
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage is 600 V.
What package type does the IRG4PC30KD use?
It uses a TO-247AC through-hole package.
