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The IRG4PC30KPbF is a Generation 4 N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features an ultrafast soft recovery diode and is housed in a TO-247AC package. Key electrical parameters include a collector-emitter breakdown voltage of 1200 V, a continuous collector current of 30 A at 25°C, and a maximum power dissipation of 100 W. The device exhibits low conduction losses with a typical saturation voltage of 2.29 V at 16 A, and optimized switching characteristics for high-frequency applications.
Verify the component authenticity against Infineon or International Rectifier official documentation. Confirm the specific ordering suffix matches the required lead-free and packaging specifications. Ensure the datasheet revision aligns with your design requirements before finalizing procurement decisions.
Select this component for designs requiring robust 1200 V blocking capability and efficient thermal management in a TO-247AC package. Consider its Generation 4 technology benefits for improved efficiency in hard-switching applications compared to previous generations.
This part belongs to the IRG4P series of Generation 4 IGBTs from International Rectifier, now part of Infineon Technologies. The series is engineered for high-performance power switching, offering enhanced reliability and performance metrics suitable for demanding industrial and consumer electronics applications.
Public confirmed substitute part numbers are not available in the provided source material.