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The IRG4PC30SPbF is a standard-speed Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247AC package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C, with a maximum on-state collector-emitter saturation voltage of 1.98 V at 30 A. The device incorporates an optimized field-stop technology for low switching losses and high efficiency. Key electrical parameters include a turn-on delay time of 50 ns, a fall time of 110 ns, and a total gate charge of 55 nC. Thermal characteristics specify a junction-to-case thermal resistance of 1.0 °C/W and a maximum operating junction temperature range up to 175°C.
Verify the exact part number suffix against official Infineon documentation to confirm lead-free status and packaging specifications. Ensure that the ordering code matches the required industrial grade and package variant. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement decisions.
Select this component based on its 600 V rating and 30 A current capacity relative to system requirements. Evaluate the thermal resistance and saturation voltage to ensure adequate heat dissipation within the target enclosure. Confirm compatibility with available gate drive voltages and switching frequencies to optimize overall circuit efficiency.
This IGBT belongs to the standard speed product line, balancing switching performance with conduction losses. It utilizes field-stop technology to enhance breakdown voltage capability while maintaining low forward voltage drop. The component is engineered for industrial applications demanding reliable power switching under moderate frequency conditions.
Consult official replacement guides for verified substitute part numbers. Do not assume functional equivalence with other voltage or current ratings without verifying pinout and thermal specifications.
The maximum collector-emitter saturation voltage is 1.98 V when measured at a collector current of 30 A.
Yes, the absolute maximum rating for the gate-emitter voltage includes a negative limit of -20 V.
The typical total gate charge is 55 nC under specified test conditions.