IRG4PC40FDPBF

Description：IGBT 600V 49A TO-247AC
Series：-

SKU:5e4bdeb59c63 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 49A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：49 A
Current - Collector Pulsed (Icm)：196 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 27A
Power - Max：160 W
Switching Energy：950µJ (on), 2.01mJ (off)
Input Type：Standard
Gate Charge：100 nC
Td (on/off) @ 25°C：63ns/230ns
Test Condition：480V, 27A, 10Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PC40FDPBF

Overview

The IRG4PC40FDPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 27 A at 25 °C. The device utilizes the TO-247AC through-hole package and operates within a temperature range of -55 °C to +150 °C. It integrates an ultrafast soft-recovery anti-parallel diode, optimized for medium operating frequencies in hard switching applications.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes suitable for bridge configurations.
Minimized recovery characteristics that reduce or eliminate the need for snubbing circuits.

Applications

Medium frequency power conversion systems
Bridge configurations requiring integrated freewheeling diodes
Resonant mode operation applications

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing gate drive requirements. Confirm RoHS compliance status if required by local regulations. Check for obsolescence notices as this component may be superseded by newer series.

Selection Notes

Select this component for designs requiring high efficiency and reduced snubber complexity. The integrated diode simplifies bridge circuit layouts. Verify thermal management capabilities given the 150 °C junction temperature limit. Consider the 27 A rating relative to peak load currents in the target application.

Part Context

This part belongs to Infineon's Generation 4 IGBT family, designed to replace equivalent industry-standard Generation 3 devices. It represents a transition toward higher efficiency and tighter manufacturing tolerances within the standard TO-247AC form factor used in industrial power electronics.

Replacement Considerations

Official documentation indicates it is designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Specific substitute part numbers are not provided in the available public data; consult manufacturer cross-reference guides for verified alternatives.