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The IRG4PC40KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes UltraFast technology to support switching frequencies in the range of 8 kHz to 25 kHz. The device features a TO-247-3 through-hole package, providing robust thermal management for high-power applications. Key electrical parameters include a collector-emitter breakdown voltage of 600 V and a continuous collector current of 42 A at 25°C. The maximum power dissipation is rated at 160 W, with a collector-emitter saturation voltage of 2.6 V. Operating junction temperature ranges from -55°C to 150°C.
Verify the specific suffix 'KDPBF' against official Infineon documentation to confirm lead-free status and RoHS compliance. Confirm availability as this component may be subject to lifecycle changes or discontinuation notices. Ensure the ordering part number matches the exact pinout and thermal characteristics required for your design.
Select this IGBT for designs requiring 600 V blocking capability and moderate current handling up to 42 A. Consider the 2.6 V saturation voltage for conduction loss calculations. Evaluate the thermal resistance and package constraints for your heatsinking strategy. Verify that the switching frequency requirements align with the UltraFast technology specifications.
This component belongs to Infineon's IGBT transistor family, specifically utilizing UltraFast technology. It is designed for general-purpose power switching applications where efficiency and switching speed are critical. The TO-247-3 package is standard for high-current discrete power devices, facilitating easy integration into industrial and consumer power electronics.
Consult official Infineon substitution guides for verified alternatives. Cross-reference key parameters such as Vceo, Ic, and package type when evaluating potential substitutes.