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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 39A
- Power - Max：200 W
- Switching Energy：1.5mJ (on), 2.4mJ (off)
- Input Type：Standard
- Gate Charge：190 nC
- Td (on/off) @ 25°C：55ns/240ns
- Test Condition：480V, 39A, 5Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC50FDPBF is a Generation 4 N-channel IGBT with an integrated ultrafast soft-recovery diode, housed in a TO-247AC package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25°C case temperature. The device offers a typical saturation voltage of 1.45 V at 39 A and supports a pulsed collector current of 280 A. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations.
- Fast switching characteristics optimized for medium operating frequencies, including hard switching up to 5 kHz and resonant mode above 20 kHz.
Applications
- Medium frequency power conversion systems
- Resonant mode inverters
- Bridge configurations requiring minimized snubbing
Procurement Notes
Verify the specific suffix 'PBF' against official Infineon documentation to confirm lead-free compliance and RoHS status. Ensure the ordering part number matches the exact datasheet revision required for your design. Confirm thermal interface material compatibility with the TO-247AC package dimensions before procurement.
Selection Notes
Select this component for applications requiring high efficiency and tight parameter distribution at medium frequencies. Consider the integrated diode's reverse recovery characteristics when designing bridge circuits to minimize snubber requirements. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values under expected load conditions.
Part Context
This component belongs to the IRG4PC series of fast CoPack IGBTs from Infineon Technologies (formerly International Rectifier). It represents a transition to Generation 4 technology, offering improved performance over Generation 3 devices while maintaining industry-standard pinouts and packaging for drop-in replacement capabilities.
Replacement Considerations
Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify electrical parameters and thermal characteristics when substituting with other Generation 4 or newer IGBT models from different manufacturers.
FAQ
What is the typical collector-emitter saturation voltage?
The typical VCE(on) is 1.45 V at a gate-emitter voltage of 15 V and a collector current of 39 A.
Is the integrated diode suitable for bridge configurations?
Yes, the IGBT is co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes specifically optimized for use in bridge configurations.
What is the recommended operating frequency range?
The device is optimized for medium operating frequencies, specifically greater than 20 kHz in resonant mode and up to 5 kHz in hard switching applications.
