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The Infineon IRG4PC50K is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 52 A at 25 °C. The device utilizes a TO-247-3 through-hole package, providing robust thermal management with a power dissipation rating of 200 W. It operates within a temperature range of -55 °C to +150 °C, with a maximum gate-emitter voltage of ±20 V.
Verify the specific suffix designation when ordering, as the base model IRG4PC50K may correspond to variants such as IRG4PC50KPBF or IRG4PC50UD-EPBF. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability varies by region. Ensure the selected variant matches the required switching speed and saturation voltage specifications for the target circuit design.
Select this component for designs requiring 600 V blocking capability and moderate current handling up to 52 A. The TO-247-3 package facilitates easy mounting on heatsinks for effective thermal dissipation. Consider the specific switching frequency requirements, as different suffixes offer varying trade-offs between conduction losses and switching speeds.
This IGBT belongs to Infineon's legacy UltraFast series, engineered for general-purpose power conversion. It serves as a discrete alternative to integrated modules in medium-power applications. The technology balances low conduction voltage drop with acceptable switching losses, making it a standard choice for cost-sensitive industrial power electronics.
Public confirmed substitute part numbers include IRG4PC50KPBF and IRG4PC50UD-EPBF. Verify pinout compatibility and thermal resistance parameters before substitution.