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The IRG4PC50SDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25°C. The device has a saturation voltage of 1.7 V and a power dissipation rating of 200 W. It utilizes TO-247AC through-hole packaging with extended leads for robust mounting.
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm RoHS compliance status and check for end-of-life notifications, as availability may be restricted. Ensure the TO-247AC package matches your PCB footprint requirements before ordering.
Select this IGBT for applications requiring fast switching speeds and integrated freewheeling diodes. The 600V rating suits medium-voltage inverters. Consider the 70A current limit and 200W power dissipation when designing heat sinks. Verify gate drive compatibility with standard logic levels.
This component belongs to Infineon’s UltraFast series of IGBTs, designed for efficiency in power conversion. It combines an N-channel IGBT with a fast-recovery diode in a single package, reducing circuit complexity compared to discrete solutions.
Check datasheets for direct replacements like IRG4PC50UDPBF, ensuring voltage and current ratings match. Verify pinout compatibility for TO-247AC packages. Confirm switching speed characteristics align with system timing requirements.