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The IRG4PC60UPbF is a Generation 4 UltraFast Insulated Gate Bipolar Transistor (IGBT) in a TO-247AC package. It features a maximum collector-emitter voltage of 600V and a continuous collector current of 80A at 25°C case temperature. The device is optimized for high operating frequencies up to 50 kHz in hard switching and over 200 kHz in resonant mode. Key electrical parameters include a typical saturation voltage of 1.9V at 80A, a maximum gate charge of 53 nC, and a total switching loss of 1.5 mJ under specified test conditions.
Verify the component authenticity by checking the marking code against Infineon's official documentation. Ensure the ordering suffix matches the required lead-free specification. Confirm that the datasheet version aligns with the specific batch requirements for your industrial application.
Select this component for applications requiring high efficiency and fast switching speeds. Consider the thermal resistance and safe operating area when designing the heat sink. Ensure the gate drive voltage and resistance are within the specified limits to optimize switching performance and minimize losses.
This IGBT belongs to Infineon's Generation 4 family, designed to replace older models like the IRG4PC40UD. It offers improved performance metrics while maintaining compatibility with industry-standard packages. The part is intended for industrial markets where reliability and efficiency are critical.
Public confirmed substitute part numbers: IRG4PC40UD.
The IRG4PC60UPbF is optimized for high operating frequencies up to 50 kHz in hard switching applications.
The typical saturation voltage (VCE(sat)) is 1.9V at a collector current of 80A and junction temperature of 25°C.
Yes, the IRG4PC60UPbF is manufactured with lead-free construction as indicated by its ordering suffix.