IRG4PF50WD-201P

Description：IGBT 900V 51A TO-247AC
Series：-

SKU:0d060b425bbb Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 900V 51A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：51 A
Current - Collector Pulsed (Icm)：204 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 28A
Power - Max：200 W
Switching Energy：2.63mJ (on), 1.34mJ (off)
Input Type：Standard
Gate Charge：160 nC
Td (on/off) @ 25°C：50ns/110ns
Test Condition：720V, 28A, 5Ohm, 15V
Reverse Recovery Time (trr)：90 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PF50WD-201P

Overview

The IRG4PF50WD-201P is an Insulated Gate Bipolar Transistor (IGBT) co-packaged with a HEXFRED ultrafast, soft-recovery anti-parallel diode. It features a VCEO of 900V and a continuous collector current of 28A at 25°C. The device utilizes the industry-standard TO-247AC package for through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.6V at 28A and a gate-emitter threshold voltage range of 3V to 5V.

Feature Summary

Co-packaged with HEXFRED ultrafast, soft-recovery anti-parallel diodes optimized for bridge configurations.
Optimized switching losses provide a 50% reduction in Eoff parameter compared to previous generations.
Tight parameter distribution ensures exceptional reliability and consistent performance across production batches.

Applications

Welding power supplies
Switch-mode power supply (SMPS) topologies
Motor drive inverters

Procurement Notes

Verify the specific suffix '-201P' against official Infineon documentation to confirm exact manufacturing lot or revision details. Confirm RoHS compliance status as indicated by the 'PbF' designation in related datasheets. Ensure the TO-247AC footprint matches the target PCB layout requirements before finalizing procurement orders.

Selection Notes

Select this component for high-voltage applications requiring fast recovery characteristics. The integrated diode simplifies design by eliminating external freewheeling diode selection. Consider thermal management capabilities provided by the TO-247AC package for efficient heat dissipation in high-power density designs.

Part Context

This IGBT belongs to the IRG4 series, designed for medium-power switching applications. It represents a transition from International Rectifier products now managed under Infineon Technologies. The technology combines NPT IGBTs with HEXFRED diodes for improved efficiency in hard-switching circuits.