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Product Detailed Parameters
- Description：IGBT 900V 51A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：51 A
- Current - Collector Pulsed (Icm)：204 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 28A
- Power - Max：200 W
- Switching Energy：190µJ (on), 1.06mJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：29ns/110ns
- Test Condition：720V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PF50WPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-247AC through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 200 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrated ultrafast soft recovery diode for efficient commutation
- Lead-free construction compliant with RoHS standards
- Optimized for low switching losses in high-frequency applications
Applications
- High-frequency motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the component against official Infineon datasheets to confirm pinout compatibility and thermal characteristics. Ensure the TO-247AC package dimensions match the target PCB layout. Check for lead-free compliance requirements if operating in regulated environments. Confirm that the 600V rating and 50A current capacity meet the specific circuit demands before integration.
Selection Notes
Select this IGBT for designs requiring robust performance at 600V with moderate current handling. The integrated anti-parallel diode simplifies half-bridge configurations. Consider the 200W power dissipation limit when designing heatsinking solutions. Verify that the switching frequency aligns with the device's ultrafast recovery specifications to minimize losses.
Part Context
This component belongs to the IRG4P series of IGBTs from Infineon Technologies. It is designed as a discrete power switch suitable for medium-power conversion tasks. The TO-247AC package provides reliable thermal management for through-hole mounting. It represents a standard solution for industrial power electronics where efficiency and reliability are critical.
Replacement Considerations
IRG4PC50KPBF
FAQ
Does the IRG4PF50WPbF include an integrated diode?
Yes, it features an integrated ultrafast soft recovery diode.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage is 600 V.
Is this component lead-free?
Yes, the PbF suffix indicates lead-free construction.
