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The IRG4PH20K is a short-circuit rated UltraFast IGBT manufactured by Infineon Technologies, originally from International Rectifier. It features a collector-emitter voltage (Vces) of 1200 V and a typical saturation voltage (Vce(on)) of 3.17 V at a gate-emitter voltage (Vge) of 15 V with a collector current (Ic) of 5.0 A. The device is optimized for motor control applications with a short-circuit time rating (tsc) of 10 µs at VCC = 720 V and TJ = 125°C.
Verify the manufacturer lineage as this component originates from International Rectifier, now part of Infineon Technologies. Confirm that the specific datasheet version matches the required electrical parameters, particularly the 1200 V rating and 10 µs short-circuit tolerance. Ensure compatibility with recommended HEXFRED ultrafast diodes for freewheeling to minimize EMI and switching losses in the final circuit implementation.
Select this component for applications demanding high efficiency and tight parameter distribution in motor drive environments. The device offers superior performance compared to previous generations due to its advanced design. Consider pairing with compatible ultrafast soft recovery diodes to optimize system noise and switching loss profiles effectively.
This IGBT belongs to the UltraFast series, designed to balance conduction and switching losses. It utilizes a technology that supports high power density requirements in modern electronic systems. The component represents a transition point from International Rectifier to Infineon Technologies product portfolios.
IRG4PH20KD
The device is rated for a short-circuit time of 10 µs under conditions of VCC = 720 V and TJ = 125°C.
The typical Vce(on) is 3.17 V when measured at a collector current of 5.0 A and a gate-emitter voltage of 15 V.