IRG4PH20KD

$5.36

Description：IGBT 1200V 11A TO-247AC
Series：-

SKU:80b991168d04 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 11A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：11:00 AM
Current - Collector Pulsed (Icm)：22 A
Vce(on) (Max) @ Vge, Ic：4.3V @ 15V, 5A
Power - Max：60 W
Switching Energy：620µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：28 nC
Td (on/off) @ 25°C：50ns/100ns
Test Condition：800V, 5A, 50Ohm, 15V
Reverse Recovery Time (trr)：51 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH20KD

Overview

The IRG4PH20KD is a single Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a collector-emitter voltage of 1200V and a continuous collector current of 5A at 25°C. The device utilizes a TO-247 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.17V at 15V gate drive and 5A current. It operates within a junction temperature range of -55°C to +150°C and supports a short-circuit time of 10µs at 720V.

Feature Summary

Integrated ultrafast soft recovery diode for minimized EMI and switching losses
High short-circuit rating optimized for robust motor control applications
Combines low conduction losses with high switching speed capabilities

Applications

Motor control systems
Switched-mode power supplies
Inverter circuits

Procurement Notes

Verify the specific suffix and manufacturer history, as International Rectifier was acquired by Infineon. Confirm RoHS compliance status and current production lifecycle stage via official Infineon documentation before integration into new designs.

Selection Notes

Select this component for high-voltage applications requiring fast recovery characteristics. Ensure thermal management supports the specified power dissipation. Verify gate drive requirements align with the 15V typical operating condition for optimal performance.

Part Context

This IGBT belongs to the IRG4PH series, designed for high-efficiency power conversion. It represents a generation of devices offering tighter parameter distribution and higher efficiency compared to earlier models, suitable for demanding industrial power electronics.