IRG4PH30K

$1.96

Description：IGBT 1200V 20A TO-247AC
Series：-

SKU:ceda03da7f38 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 20A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：40 A
Vce(on) (Max) @ Vge, Ic：4.2V @ 15V, 10A
Power - Max：100 W
Switching Energy：640µJ (on), 920µJ (off)
Input Type：Standard
Gate Charge：53 nC
Td (on/off) @ 25°C：28ns/200ns
Test Condition：960V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH30K

Overview

The IRG4PH30K is a discontinued single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C. Key electrical parameters include a saturation voltage of 3.5V, a gate-emitter voltage range of -20V to +20V, and a power dissipation rating of 200W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Single IGBT configuration for high-voltage switching applications
Ultrafast recovery characteristics optimized for frequencies between 4kHz and 20kHz
Robust thermal performance with a maximum junction temperature of 150°C

Applications

High-frequency AC motor drives
Switch-mode power supplies
DC-to-AC inverters

Procurement Notes

This component is officially listed as End-of-Life (EOL) by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm that replacement components meet identical voltage, current, and package specifications to ensure circuit compatibility.

Selection Notes

Select this part for designs requiring 1200V blocking capability and 30A continuous current handling. Ensure the application supports through-hole mounting and can accommodate the specified thermal dissipation requirements. Evaluate alternative IGBTs if active sourcing is required for new production.

Part Context

Infineon Technologies produces this IGBT as part of its discrete power semiconductor portfolio. The product line focuses on high-efficiency switching solutions for industrial and consumer electronics. This specific model represents an older generation of ultrafast IGBTs designed for medium-power conversion tasks.