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Product Detailed Parameters
- Description：IGBT 1200V 30A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：160 W
- Switching Energy：1.31mJ (on), 1.12mJ (off)
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：50ns/96ns
- Test Condition：800V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：63 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PH40KDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter maximum voltage of 600 V and a continuous collector current rating of 35 A at 25 °C. The device utilizes a TO-247-3 package for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 2.6 V, a gate-emitter maximum voltage range of -20 V to +20 V, and a power dissipation capacity of 160 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Single IGBT configuration designed for high-power switching applications
- Optimized for ultra-fast switching frequencies between 8 kHz and 25 kHz
- Robust thermal performance with low saturation voltage characteristics
Applications
- Switch-mode power supplies
- Motor control systems
- High-frequency inverters
Procurement Notes
Verify the specific suffix 'D' in the part number against official Infineon documentation to confirm exact packaging or tape-and-reel specifications, as standard suffixes may vary. Confirm RoHS compliance status directly from the manufacturer's datasheet before procurement. Ensure the ordering code matches the required package variant to avoid integration errors.
Selection Notes
Select this component for designs requiring 600 V blocking capability with moderate current handling up to 35 A. The TO-247-3 package facilitates efficient heat sinking for high-power density circuits. Evaluate the 2.6 V saturation voltage against system efficiency requirements. Ensure gate drive voltages remain within the specified ±20 V limits to prevent device damage.
Part Context
This component belongs to Infineon’s UltraFast series of IGBTs, engineered for improved switching performance compared to standard devices. The series targets applications demanding reduced switching losses and higher operational frequencies. It serves as a discrete power switch alternative to modules in medium-power industrial and consumer electronics systems.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Cross-reference pinouts and thermal resistance values when considering alternatives.
