SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG4PH40UD-EPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 41A at 25°C. The device utilizes the Field Stop technology to optimize switching performance and conduction losses. It is housed in a TO-247AD package, designed for high-power applications requiring robust thermal management and reliable operation under demanding electrical conditions.
Verify the complete part number including the suffix against official Infineon documentation to ensure correct packaging and RoHS compliance status. Confirm that the specific revision matches the required datasheet version for accurate parameter validation. Cross-reference the ordering code with authorized distributors to avoid counterfeit components.
Select this component for designs requiring high voltage isolation and moderate current handling in compact power modules. Evaluate thermal resistance requirements based on the TO-247AD package capabilities. Ensure gate drive circuits are compatible with the specified input capacitance and threshold voltage ranges for stable switching.
This IGBT belongs to the High Power Discrete IGBT family from Infineon, engineered for industrial power conversion. It complements other Field Stop devices offering similar voltage ratings but different current capacities. The series supports various packaging options to suit diverse thermal and mechanical design constraints in power electronics.
Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 1200V rating, TO-247AD package, and comparable current specifications. Verify pinout compatibility and thermal characteristics before implementation.