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Product Detailed Parameters
- Description：IGBT 1200V 41A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：41 A
- Current - Collector Pulsed (Icm)：82 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 21A
- Power - Max：160 W
- Switching Energy：1.95mJ (on), 1.71mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：22ns/100ns
- Test Condition：800V, 21A, 10Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG4PH40UD2-EP is a 1200V Insulated Gate Bipolar Transistor (IGBT) with an integrated ultra-fast soft-recovery diode, optimized for high-frequency applications up to 200kHz. It features a TO-247AD package and supports continuous collector currents of 41A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 3.1V and handles a pulsed current of 82A. Key electrical parameters include a gate-emitter voltage range of ±20V, power dissipation of 160W, and switching times of approximately 50ns. Operating temperatures span from -55°C to +150°C junction temperature.
Feature Summary
- Co-packaged IGBT with ultra-fast soft-recovery diode
- Optimized for high-frequency operation up to 200kHz
- Robust thermal performance in TO-247AD package
Applications
- High-frequency motor drive systems
- Industrial power inverters
- Switched-mode power supplies (SMPS)
- Resonant converter topologies
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific suffix matches the required datasheet revision. Check for obsolescence status as this part may be discontinued. Ensure storage conditions comply with moisture sensitivity levels if applicable. Validate that the TO-247AD footprint aligns with PCB design requirements before ordering.
Selection Notes
Select this component for designs requiring high switching frequencies and low reverse recovery charge. Compare saturation voltage against efficiency targets. Consider thermal resistance limits for heat sink sizing. Evaluate gate drive requirements for the specified voltage ranges. Assess application frequency against the 200kHz optimization limit to ensure optimal performance and reliability.
Part Context
This IGBT belongs to Infineon's high-performance discrete semiconductor portfolio. It integrates a fast diode to simplify circuit topology. The technology focuses on reducing switching losses. This enables compact power electronics designs. The component serves critical roles in modern industrial and automotive power conversion systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive circuits. Check pinout alignment for direct replacement attempts. Review thermal characteristics for equivalent heat dissipation capabilities.
