IRG4PH40UPBF

Description：IGBT 1200V 41A TO-247AC
Series：-

SKU:92556e25e38e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 41A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：41 A
Current - Collector Pulsed (Icm)：82 A
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 21A
Power - Max：160 W
Switching Energy：1.04mJ (on), 3.4mJ (off)
Input Type：Standard
Gate Charge：86 nC
Td (on/off) @ 25°C：24ns/220ns
Test Condition：960V, 21A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH40UPBF

Overview

The IRG4PH40UPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter breakdown voltage of 1200 V and operates within a junction temperature range of -55°C to +150°C. The device supports a continuous collector current of 41 A at 25°C case temperature, with a maximum power dissipation of 160 W under the same conditions. Packaged in an industry-standard TO-247AC housing, it is designed for high-frequency switching applications up to 40 kHz in hard-switching modes.

Feature Summary

Optimized for high operating frequencies up to 40 kHz in hard switching environments
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
Industry standard TO-247AC package facilitates easy integration into existing designs

Applications

Power conversion systems
Switched-mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Welding equipment

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead-free marking on the package. Check datasheet revisions for any updates to electrical characteristics or thermal resistance values before finalizing procurement specifications.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive circuits can support the required voltage levels and switching speeds. Consider derating factors for continuous operation at elevated case temperatures to maintain reliability and prevent thermal runaway during high-load scenarios.

Part Context

This component belongs to the UltraFast Speed IGBT series from Infineon Technologies. It is engineered specifically for applications demanding high efficiency and fast switching capabilities. The product line focuses on reducing conduction losses compared to traditional MOSFETs while offering superior performance over short-circuit rated alternatives.