ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 1200V 45A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 24A
- Power - Max：200 W
- Switching Energy：2.1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：47ns/110ns
- Test Condition：800V, 24A, 5Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4PH50UDPBF is an insulated gate bipolar transistor with an integrated ultrafast soft recovery diode, housed in a TO-247AC package. It features a collector-to-emitter breakdown voltage of 1200 V and a continuous collector current rating of 45 A at 25°C case temperature. The device exhibits a typical saturation voltage of 2.78 V at 24 A. Maximum power dissipation is rated at 200 W at 25°C and 78 W at 100°C. The junction temperature range spans from -55°C to +150°C.
Feature Summary
- Co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for bridge configurations
- Optimized for high operating frequencies up to 40 kHz in hard switching applications
- New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
Applications
- High frequency resonant mode circuits exceeding 200 kHz
- Bridge configurations requiring minimized snubbing due to diode characteristics
- Hard switching power conversion systems
Procurement Notes
Verify the component against official Infineon documentation to confirm authenticity and specifications. Ensure the TO-247AC package dimensions match your board layout requirements. Check for lead-free compliance status if required by your manufacturing standards. Confirm that the specific lot code aligns with your quality control protocols before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high switching frequencies and low reverse recovery losses. The integrated diode simplifies bridge designs by eliminating external snubber components. Evaluate thermal management needs carefully, as power dissipation drops significantly at elevated case temperatures. Ensure gate drive voltages remain within the specified ±20 V limit to prevent damage.
Part Context
This device belongs to the UltraFast CoPack series, combining an N-channel IGBT with a HEXFRED diode. It represents an evolution in IGBT technology aimed at improving efficiency and reducing switching losses. The TO-247AC package provides industry-standard mounting compatibility while supporting high current densities.
Replacement Considerations
IRG4PH50U D-PB
FAQ
What is the maximum operating frequency for hard switching applications?
The device is optimized for high operating frequencies up to 40 kHz in hard switching modes.
How does the integrated diode affect snubber requirements?
The HEXFRED diode's minimized recovery characteristics require less or no snubbing compared to standard diodes.
What is the clamped inductive load current rating?
The clamped inductive load current (ILM) is rated at 180 A.
